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irf3710pbf hexfet ? power mosfet parameter typ. max. units r jc junction-to-case ??? 0.75 r cs case-to-sink, flat, greased surface 0.50 ??? c/w r ja junction-to-ambient ??? 62 thermal resistance www.irf.com 1 v dss = 100v r ds(on) = 23m ? i d = 57a s d g to-220ab advanced hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the to-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. the low thermal resistance and low package cost of the to-220 contribute to its wide acceptance throughout the industry. advanced process technology ultra low on-resistance dynamic dv/dt rating 175c operating temperature fast switching fully avalanche rated lead-free description absolute maximum ratings parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 57 i d @ t c = 100c continuous drain current, v gs @ 10v 40 a i dm pulsed drain current 180 p d @t c = 25c power dissipation 200 w linear derating factor 1.3 w/c v gs gate-to-source voltage 20 v i ar avalanche current 28 a e ar repetitive avalanche energy 20 mj dv/dt peak diode recovery dv/dt 5.8 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c mounting torque, 6-32 or m3 srew 10 lbf?in (1.1n?m) pd - 94954d
2 www.irf.com s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source c urrent integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.2 v t j = 25c, i s = 28a, v gs = 0v t rr reverse recovery time ??? 140 220 ns t j = 25c, i f = 28a q rr reverse recovery charge ??? 670 1010 nc di/dt = 100a/s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) source-drain ratings and characteristics 57 230 starting t j = 25c, l = 0.70mh r g = 25 ? , i as = 28a, v gs =10v (see figure 12) repetitive rating; pulse width limited by max. junction temperature. (see fig. 11) i sd 28a di/d
380a/s, v dd v (br)dss , t j 175c pulse width 400s; duty cycle 2%. this is a typical value at device destruction and represents operation outside rated limits. this is a calculated value limited to t j = 175c . parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 100 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.13 ??? v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? ??? 23 m ? v gs = 10v, i d =28a v gs(th) gate threshold voltage 2.0 ??? 4.0 v v ds = v gs , i d = 250a g fs forward transconductance 32 ??? ??? s v ds = 25v, i d = 28a ??? ??? 25 a v ds = 100v, v gs = 0v ??? ??? 250 v ds = 80v, v gs = 0v, t j = 150c gate-to-source forward leakage ??? ??? 100 v gs = 20v gate-to-source reverse leakage ??? ??? -100 na v gs = -20v q g total gate charge ??? ??? 130 i d = 28a q gs gate-to-source charge ??? ??? 26 nc v ds = 80v q gd gate-to-drain ("miller") charge ??? ??? 43 v gs = 10v, see fig. 6 and 13 t d(on) turn-on delay time ??? 12 ??? v dd = 50v t r rise time ??? 58 ??? i d = 28a t d(off) turn-off delay time ??? 45 ??? r g = 2.5 ? t f fall time ??? 47 ??? v gs = 10v, see fig. 10 between lead, ??? ??? 6mm (0.25in.) from package and center of die contact c iss input capacitance ??? 3130 ??? v gs = 0v c oss output capacitance ??? 410 ??? v ds = 25v c rss reverse transfer capacitance ??? 72 ??? pf ? = 1.0mhz, see fig. 5 e as single pulse avalanche energy ??? 1060 280 mj i as = 28a, l = 0.70mh nh electrical characteristics @ t j = 25c (unless otherwise specified) l d internal drain inductance l s internal source inductance ??? ??? s d g i gss ns 4.5 7.5 i dss drain-to-source leakage current
www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 3.5v 20s pulse width tj = 25c vgs top 16v 10v 7.0v 6.0v 5.0v 4.5v 4.0v bottom 3.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 3.5v 20s pulse width tj = 175c vgs top 16v 10v 7.0v 6.0v 5.0v 4.5v 4.0v bottom 3.5v 3.0 4.0 5.0 6.0 7.0 8.0 9.0 v gs , gate-to-source voltage (v) 0.10 1.00 10.00 100.00 1000.00 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 175c v ds = 15v 20s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 57a
4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 20 40 60 80 100 0 2 5 7 10 12 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 28a v = 20v ds v = 50v ds v = 80v ds 0.0 0.5 1.0 1.5 2.0 v sd , source-todrain voltage (v) 0.10 1.00 10.00 100.00 1000.00 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec
www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature v ds 90% 10% v gs t d(on) t r t d(off) t f
1 0.1 % + -

25 50 75 100 125 150 175 0 10 20 30 40 50 60 t , case temperature ( c) i , drain current (a) c d 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + -

t p v (br)dss i as ! " #$ r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs 25 50 75 100 125 150 175 0 110 220 330 440 550 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 11a 20a 28a
www.irf.com 7
p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - ?

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8 www.irf.com ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 07/2010 data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. notes: 1. for an automotive qualified version of this part please see http://www.irf.com/product-info/auto/ 2. for the most current drawing please refer to ir website at http://www.irf.com/package/ to-220ab package is not recommended for surface mount application

international part number rect ifier lot code as s e mb l y logo year 0 = 2000 dat e code week 19 line c lot code 1789 e xample : t his is an irf 1010 note: "p" in assembly line position i ndi cates " l ead - f r ee" in the assembly line "c" as s e mb led on ww 19, 2000

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